inchange semiconductor product specification silicon pnp power transistors 2SB676 description ? with to-220c package ? high dc current gain : h fe =2000 @v ce =-2v , i c =-1a (min.) ? darlington applications ?for switching applications ? hammer drive, pulse motor drive applications ? power amplifier applications pinning pin description 1 base 2 collector; connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -4 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB676 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma, i b =0 -80 v v cesat collector-emitter saturation voltage i c =-3a ,i b =-6ma -1.5 v v besat base-emitter saturation voltage i c =-3a ,i b =-6ma -2.0 v i cbo collector cut-off current v cb =-100v, i e =0 -20 | a i ebo emitter cut-off current v eb =-5v; i c =0 -2.5 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 2000 h fe-2 dc current gain i c =-3a ; v ce =-2v 1000 switching times t on turn-on time 0.15 | s t s storage time 0.80 | s t f fall time v ce =-30v, i b1 =-i b2 =-6ma r l =10 |? 0.40 | s
inchange semiconductor product specification 3 silicon pnp power transistors 2SB676 package outline fig.2 outline dimensions
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